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dual series switching diode
Selling leads
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...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute ...
2024-12-09 18:42:28
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...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute ...
2024-12-09 21:52:33
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 18:42:28
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:52:33
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12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 18:42:28
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12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 21:52:33
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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 18:42:28
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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:52:33
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 18:42:28
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...Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 ...
2024-12-09 18:42:28
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