121 - 130 of 270
bom quotation mosfet power transistor
Selling leads
|
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ...
2024-12-09 21:52:33
|
|
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ...
2024-12-09 21:52:33
|
|
Electronic component AP1334GEU-HF advantage price for original stock Description AP1334 series are from Advanced Power innovated design and silicon ...
2024-12-09 19:34:01
|
|
Cheap Factory Price AP1332GEU-HF Please Contact The Business, Is On Same Day Shall Prevail Description AP1332 series are from Advanced Power innovated ...
2024-12-09 19:34:01
|
|
|
Electronic component AP1334GEU-HF advantage price for original stock Description AP1334 series are from Advanced Power innovated design and silicon ...
2024-12-09 21:52:33
|
|
|
Cheap Factory Price AP1332GEU-HF Please Contact The Business, Is On Same Day Shall Prevail Description AP1332 series are from Advanced Power innovated ...
2024-12-09 21:52:33
|
|
SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 18:42:28
|
|
|
SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 21:52:33
|
|
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 18:42:28
|
|
|
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 21:52:33
|