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LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

Brand Name	Hua Xuan Yang
Model Number	AP1332GEU-HF
Certification	RoHS、SGS
Place of Origin	China
Minimum Order Quantity	Negotiable
Price	Negotiated
Payment Terms	T/T, Western Union
Supply Ability	30000pcs/week
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Model Number:	AP1332GEU-HF
Type:	Electronic Components
Diode:	Transistor
IGBT module:	High-frequency tube
Inductor:	LED
D/C:	Newest

Detailed Product Description

Cheap Factory Price AP1332GEU-HF Please Contact The Business, Is On Same Day Shall Prevail

Description

AP1332 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test.

3.Surface mounted on FR4 board, t ≦ 10 sec.

Absolute Maximum Ratings@T_j=25.oC(unless otherwise specified)

Symbol	Parameter	Rating	Unit
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Drain Current³, V_GS @ 4.5V	600	mA
I_D@T_A=70℃	Drain Current³, V_GS @ 4.5V	470	mA
IDM	Pulsed Drain Current¹	2.5	A
P_D@T_A=25℃	Total Power Dissipation	0.35	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	360	℃/W

AP1332GEU-H

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=600mA	-	-	0.6	Ω
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=2.5V, I_D=300mA	-	-	2	Ω
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.5	-	1.25	V
gfs	Forward Transconductance	V_DS=5V, I_D=600mA	-	1	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+30	uA
Q_g	Total Gate Charge	I_D=600mA V_DS=16V V_GS=4.5V	-	1.3	2	nC
Qgs	Gate-Source Charge		-	0.3	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	0.5	-	nC
td(on)	Turn-on Delay Time	V_DS=10V I_D=600mA R_G=3.3Ω V_GS=5V	-	21	-	ns
t_r	Rise Time		-	53	-	ns
td(off)	Turn-off Delay Time		-	100	-	ns
t_f	Fall Time		-	125	-	ns
Ciss	Input Capacitance	V_GS=0V V.DS=10V f=1.0MHz	-	38	60	pF
Coss	Output Capacitance		-	17	-	pF
Crss	Reverse Transfer Capacitance		-	12	-	pF

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VSD	Forward On Voltage²	I_S=300mA, V_GS=0V	-	-	1.2	V

[Shipping]

1. We will ship the items within 2 working days after the payment confirmed.
2. We can ship to you by UPS/DHL/TNT/EMS/FedEx. Please contact us directly and we will use your preferred ways. For the Countries & Regions where EMS cannot deliver, please choose other shipping ways.
3. We are not responsible for any accidents, delays or other issues caused by the forwarder.
4. Any import fees or charges are on the buyer's account

Product Tags: 2.5A Mosfet Power Transistor 0.35W Mosfet Power Transistor AP1332GEU-HF Diode Mosfet Transistor

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