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8a mosfet power transistor
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This ...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This ...
2024-12-09 21:52:33
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... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency ...
2024-12-09 18:42:28
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... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency ...
2024-12-09 21:52:33
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...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ ...
2024-12-09 18:45:55
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...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ ...
2024-12-09 21:52:33
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OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to ...
2024-12-09 19:03:13
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OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to ...
2024-12-09 21:52:33
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...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be ...
2024-12-09 18:45:20
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...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be ...
2024-12-09 21:52:33
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