China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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8a mosfet power transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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8a mosfet power transistor

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Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to ... 2024-12-09 19:03:13
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to ... 2024-12-09 21:52:33
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle ... 2024-12-09 19:34:01
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle ... 2024-12-09 21:52:33
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent ... 2024-12-09 18:45:55
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent ... 2024-12-09 21:52:33
...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to ... 2024-12-09 19:11:03
...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to ... 2024-12-09 21:52:33
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS... 2024-12-09 18:50:53
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS... 2024-12-09 21:52:33
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