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0 35w mosfet power transistor
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AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ...
2024-12-09 19:03:13
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AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ...
2024-12-09 19:03:13
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AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ...
2024-12-09 21:52:33
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AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ...
2024-12-09 21:52:33
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Wholesale electronic components Support BOM Quotation AP2344GN-H Description AP2344 series are from Advanced Power innovated design and silicon ...
2024-12-09 19:34:01
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Wholesale electronic components Support BOM Quotation AP2344GN-H Description AP2344 series are from Advanced Power innovated design and silicon ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 18:42:28
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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 21:52:33
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