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BOM Quotation 1.38W Mosfet Power Transistor APEC AP2344GN-H

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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BOM Quotation 1.38W Mosfet Power Transistor APEC AP2344GN-H

Brand Name	Hua Xuan Yang
Model Number	AP2344GN-H
Certification	RoHS、SGS
Place of Origin	China
Minimum Order Quantity	Negotiable
Price	Negotiated
Payment Terms	Western Union, L/C, T/T
Supply Ability	10,000PCS/MONTH
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Application:	Power Switch Circuits
Model Number:	APEC
Supplier Type:	Original manufacturer, Agency, Retailer
VDS:	30V
Operating Temperature:	-55 to 150
VGS:	-20V to 20V

Detailed Product Description

Wholesale electronic components Support BOM Quotation AP2344GN-H

Description

AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Drain Current³, V_GS @ 4.5V	6.4	A
I_D@T_A=70℃	Drain Current³, V_GS @ 4.5V	5.1	A
IDM	Pulsed Drain Current¹	20	A
P_D@T_A=25℃	Total Power Dissipation	1.38	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	90	℃/W

AP2344GN-H

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=6A	-	-	22	mΩ
		V_GS=2.5V, I_D=4A	-	-	32	mΩ
		V_GS=1.8V, I_D=2A	-	-	40	mΩ
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.4	-	1	V
ID(ON)	On state drain current	V_GS=4.5V, V_DS=5V	30	-	-	A
gfs	Forward Transconductance	V_DS=5V, I_D=6A	-	27	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	1	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+10	uA
Q_g	Total Gate Charge	I_D=6A V_DS=10V V_GS=4.5V	-	22	35.2	nC
Qgs	Gate-Source Charge		-	2	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	6	-	nC
td(on)	Turn-on Delay Time	V_DS=10V	-	8	-	ns
t_r	Rise Time	I_D=1A	-	11	-	ns
td(off)	Turn-off Delay Time	R_G=3.3Ω	-	38	-	ns
t_f	Fall Time	V_GS=5V	-	7	-	ns
Ciss	Input Capacitance	V_GS=0V V_DS=10V f=1.0MHz	-	1520	2430	pF
Coss	Output Capacitance		-	175	-	pF
Crss	Reverse Transfer Capacitance		-	155	-	pF
R_g	Gate Resistance	f=1.0MHz	-	1.2	2.4	Ω

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=1.2A, V_GS=0V	-	-	1.2	V
trr	Reverse Recovery Time	I_S=6A, V_GS=0V, dI/dt=100A/µs	-	16	-	ns
Qrr	Reverse Recovery Charge	I_S=6A, V_GS=0V, dI/dt=100A/µs	-	8	-	nC

FAQ

1.What is our company good at selling and producing?

1B.We have more than 14 years experience on electronic components agency and sales.

And we have our own R&D team and SMT factory on PCBA products

2.What are our strengths?

2B. We provide service to lots of big brand in China.

For electronic components: Our product line is full with different brand and different brand, you can always find the one match your requirement.

For PCBA: We have our own R&D team and SMT factory, accpet OEM. Leadtime and quality is under control.

3.If we have so many items in the BOM list, how long will it take me to get the quotation?

3B.All quotation with be provide within 2 working days

4.How about the quality of your products?How long is the warranty on your product?(Different products)

4B.We promise all product is 100% good.

5. What's your delivery time?(Spot/Custom)

5B.1 week

Product Tags: BOM Quotation Mosfet Power Transistor BOM Quotation Mosfet Power Transistor AP2344GN-H MOSFET Transistor

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