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mosfet power transistor
Selling leads
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WST2078 N&P-Channel MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which ...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This ...
2024-12-09 18:42:28
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HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The ...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ...
2024-12-09 18:42:28
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10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ...
2024-12-09 18:42:28
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6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . ...
2024-12-09 18:42:28
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5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 18:42:28
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8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m ...
2024-12-09 18:42:28
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