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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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Province/State:guangdong

Country/Region:china

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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

Brand Name	Hua Xuan Yang
Model Number	12N60
Certification	RoHS、SGS
Place of Origin	ShenZhen China
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Product name	Mosfet Power Transistor
APPLICATION	Power Management
FEATURE	Excellent RDS(on)
Power mosfet transistor	Enhancement Mode Power MOSFET
Type	N Channel Mosfet Transistor

Detailed Product Description

OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

N Channel Mosfet Transistor DESCRIPTION

The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.

N Channel Mosfet Transistor FEATURES

* R_DS(ON) < 0.7 Ω @ V_GS = 10 V, I_D = 6.0 A

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

ORDERING INFORMATION

Ordering Number		Package	Pin Assignment			Packing
Lead Free	Halogen Free		1	2	3
12N60L-TF1-T	12N60G-TF1-T	TO-220F1	G	D	S	Tube
12N60L-TF3-T	12N60G-TF3-T	TO-220F	G	D	S	Tube

Note: Pin Assignment: G: Gate D: Drain S: Source

ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

PARAMETER		SYMBOL	TEST CONDITIONS	MIN	TYP	MAX	UNI T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage		BVDSS	V_GS=0V, I_D=250μA	600			V
Drain-Source Leakage Current		IDSS	V_DS=600V, V_GS=0V			1	μA
Gate- Source Leakage Current	Forward	IGSS	V_GS=30V, V_DS=0V			100	nA
Gate- Source Leakage Current	Reverse	IGSS	V_GS=-30V, V_DS=0V			-100	nA
ON CHARACTERISTICS
Gate Threshold Voltage		VGS(TH)	V_DS=V_GS, I_D=250μA	2.0		4.0	V
Static Drain-Source On-State Resistance		RDS(ON)	V_GS=10V, I_D=6.0A			0.7	Ω
DYNAMIC CHARACTERISTICS
Input Capacitance		CISS	V_GS=0V, V_DS=25V, f =1.0 MHz		1465		pF
Output Capacitance		COSS			245		pF
Reverse Transfer Capacitance		CRSS			57		pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)		Q_G	V_DS=50V, I_D=1.3A, I_G=100μA V_GS=10V (Note 1,2)		144		nC
Gate-Source Charge		QGS			10		nC
Gate-Drain Charge		QGD			27		nC
Turn-On Delay Time (Note 1)		tD(ON)	V_DD =30V, I_D =0.5A, R_G =25Ω, V_GS=10V (Note 1,2)		81		ns
Turn-On Rise Time		t_R			152		ns
Turn-Off Delay Time		tD(OFF)			430		ns
Turn-Off Fall Time		t_F			215		ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current		I_S				12	A
Maximum Pulsed Drain-Source Diode Forward Current		ISM				48	A
Drain-Source Diode Forward Voltage		VSD	V_GS=0 V, I_S=6.0 A			1.4	V
Reverse Recovery Time		trr	V_GS=0 V, I_S=6.0 A, dI_F/dt=100 A/μs (Note 1)		336		ns
Reverse Recovery Charge		Qrr	V_GS=0 V, I_S=6.0 A, dI_F/dt=100 A/μs (Note 1)		2.21		μC

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	BVDSS	V_GS=0V I_D=250μA	100	110	-	V
Zero Gate Voltage Drain Current	IDSS	V_DS=100V,V_GS=0V	-	-	1	μA
Gate-Body Leakage Current	IGSS	V_GS=±20V,V_DS=0V	-	-	±100	nA
On Characteristics ^(Note ³⁾
Gate Threshold Voltage	VGS(th)	V_DS=V_GS,I_D=250μA	1.2	1.8	2.5	V
Drain-Source On-State Resistance	RDS(ON)	V_GS=10V, I_D =8A	98		130	m Ω
Forward Transconductance	gFS	V_DS=25V,I_D=6A	3.5	-	-	S
Dynamic Characteristics ^(Note4)
Input Capacitance	Clss	V_DS=25V,V_GS=0V, F=1.0MHz	-	690	-	PF
Output Capacitance	Coss		-	120	-	PF
Reverse Transfer Capacitance	Crss		-	90	-	PF
Switching Characteristics ^(Note ⁴⁾
Turn-on Delay Time	td(on)	V_DD=30V,I_D=2A,R_L=15Ω V_GS=10V,R_G=2.5Ω	-	11	-	nS
Turn-on Rise Time	t_r		-	7.4	-	nS
Turn-Off Delay Time	td(off)		-	35	-	nS
Turn-Off Fall Time	t_f		-	9.1	-	nS
Total Gate Charge	Q_g	V_DS=30V,I_D=3A, V_GS=10V	-	15.5		nC
Gate-Source Charge	Qgs		-	3.2	-	nC
Gate-Drain Charge	Qgd		-	4.7	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^(Note ³⁾	VSD	V_GS=0V,I_S=9.6A	-	-	1.2	V
Diode Forward Current ^(Note ²⁾	I_S		-	-	9.6	A
Reverse Recovery Time	trr	TJ = 25°C, IF =9.6A di/dt = 100A/μs^(Note3)	-	21		nS
Reverse Recovery Charge	Qrr		-	97		nC
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Product Tags: n channel mosfet transistor high voltage transistor

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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode

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