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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

Brand Name Hua Xuan Yang
Model Number AP5N10SI
Certification RoHS、SGS
Place of Origin ShenZhen China
Minimum Order Quantity Negotiation
Price Negotiated
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Delivery Time 1 - 2 Weeks
Packaging Details Boxed
Product name N Channel Mosfet Power Transistor
Model AP5N10SI
Pack SOT89-3
Marking AP5N10SI YYWWWW
VDSDrain-Source Voltage 100V
VGSGate-Sou rce Voltage ±20A
Detailed Product Description

AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

 

N Channel Mosfet Power Transistor Description:

 

The AP5N10SI is the single N-Channel logic

enhancement mode power field effect transistors to

provide excellent R DS(on), low gate charge and low

gate resistance. It ’s up to 30V operation voltage is well suited in switching mode power supply, SMPS,

notebook computer power management and other

battery powered circuits.

 

N Channel Mosfet Power Transistor Features:

 

RDS(ON)<125m Ω @VGS=10V (N-Ch)

RDS(ON)<135mΩ @VGS =4.5V (N-Ch)

Super high density cell design for extremely low

RDS(ON) Exceptional on-resistance and maximum DC current

 

N Channel Mosfet Power Transistor Applications:

 

Switching power supply, SMPS

Battery Powered System

DC/DC Converter

DC/AC Converter

Load Switch

 

Package Marking and Ordering Information

 

Product IDPackMarkingQty(PCS)
AP5N10SISOT89-3AP5N10SI YYWWWW1000

 

Table 1.Absolute Maximum Ratings (TA=25)

 

 

SymbolParameterValueUnit
VDSDrain-Source Voltage (VGS=0V)100V
VGSGate-Source Voltage (VDS=0V)±25V

 

D

I

Drain Current-Continuous(Tc=25 ℃)5A
Drain Current-Continuous(Tc=100 ℃)3.1A
IDM (pluse)Drain Current-Continuous@ Current-Pulsed (Note 1)20A
PDMaximum Power Dissipation9.3W
TJ,TSTGOperating Junction and Storage Temperature Range-55 To 150
SymbolParameterValueUnit
VDSDrain-Source Voltage (VGS=0V)100V
VGSGate-Source Voltage (VDS=0V)±25V

 

D

I

Drain Current-Continuous(Tc=25 ℃)5A
Drain Current-Continuous(Tc=100 ℃)3.1A
IDM (pluse)Drain Current-Continuous@ Current-Pulsed (Note 1)20A
PDMaximum Power Dissipation9.3W
TJ,TSTGOperating Junction and Storage Temperature Range-55 To 150

 

Table 2.Thermal Characteristic

 

SymbolParameterTypValueUnit
R JAThermal Resistance, Junction-to-Ambient-13.5℃/W

 

Table 3. Electrical Characteristics (TA=25unless otherwise noted)

 

SymbolParameterConditionsMinTypMaxUnit
On/Off States     
BVDSSDrain-Source Breakdown VoltageVGS=0V ID=250μA100  V
IDSSZero Gate Voltage Drain CurrentVDS=100V,VGS=0V  100μA
IGSSGate-Body Leakage CurrentVGS=±20V,VDS=0V  ±100nA
VGS(th)Gate Threshold VoltageVDS=VGS,ID=250 μA11.53V

 

RDS(ON)

 

Drain-Source On-State Resistance

VGS=10V, ID= 10A 110125m Ω
VGS=4.5V, ID=-5A 120135m Ω
Dynamic Characteristics
CissInput Capacitance

 

VDS=25V,VGS=0V, f=1.0MHz

 690 pF
CossOutput Capacitance 120 pF
CrssReverse Transfer Capacitance 90 pF
Switching Times
td(on)Turn-on Delay Time  11 nS

r

t

Turn-on Rise Time 7.4 nS
td(off)Turn-Off Delay Time 35 nS

f

t

Turn-Off Fall Time 9.1 nS
QgTotal Gate ChargeVDS=15V,ID=10A V GS=10V 15.5 nC
QgsGate-Source Charge 3.2 nC
QgdGate-Drain Charge 4.7 nC
Source-Drain Diode Characteristics
ISDSource-Drain Current(Body Diode)   20A
VSDForward on Voltage (Note 1)VGS=0V,IS=2A  0.8V

 

Reflow Soldering:

 

The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and

the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture

in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

 

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.

 

Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface

temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness

 

2.5 mm or with a volume 350 mm

3

so called thick/large packages). The top-surface temperature of the packages should

 

preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm so called thin/small packages).

 

StageConditionDuration
1’st Ram Up Ratemax3.0+/-2 /sec-
Preheat150 ~20060~180 sec
2’nd Ram Upmax3.0+/-2 /sec-
Solder Joint217 above60~150 sec
Peak Temp260 +0/-520~40 sec
Ram Down rate6 /sec max-

 

Wave Soldering:

 

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.

 

Manual Soldering:

 

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

Product Tags: n channel mosfet transistor   high voltage transistor  
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