China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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50P03NF TO-252 Mosfet Power Transistor For Load Switch Power Management

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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Mr.David Lee
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50P03NF TO-252 Mosfet Power Transistor For Load Switch Power Management

Brand Name Hua Xuan Yang
Model Number 50P03NF TO-252
Certification RoHS、SGS
Place of Origin ShenZhen China
Minimum Order Quantity negotiation
Price Negotiated
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Delivery Time 1 - 2 Weeks
Packaging Details Boxed
Product name Mosfet Power Transistor
Features Surface mount package
Drain-Source Voltage -30 V
Gate-Source Voltage ±20 V
Applications Load Switch Power Management
Detailed Product Description

50P03NF TO-252 Mosfet Power Transistor For Load Switch Power Management

 

Mosfet Power Transistor DESCRIPTION

 

The 50P03NF uses advanced trench technology to provide
excellent R DS(ON) , low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for
use as aload switch or in PWM applications.


Mosfet Power Transistor GENERAL FEATURES

 

V DS = -30V,I D = -50A
R DS(ON) < 18mΩ @ V GS =-4.5V
R DS(ON) < 13mΩ @ V GS =-10V
High Power and current handing capability
Lead free product is acquired
Surface mount package


Mosfet Power Transistor Application


PWM applications
Load switch
Power management

 

Package Marking and Ordering Information

 

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

 

NOTES:


1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in 2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.

 

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

 

 

DFN5X6-8 Package Information

 

Product Tags: n channel mosfet transistor   high voltage transistor  
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