China Sapphire Substrate manufacturer
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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single crystal 4h n sic wafer

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang
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single crystal 4h n sic wafer

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... 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal ... 2025-05-06 20:40:44
...SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production ... 2025-05-06 20:41:08
SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing ... 2025-05-06 20:41:07
... semiconductor applications, featuring a 300mm diameter, 750±25µm thickness, and a 4H-N type crystal orientation with a polytype of 4H-SiC. The ... 2025-05-06 20:41:55
...2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates ... 2025-08-04 00:07:44
... to a silicon carbide (SiC) wafer with a 12-inch diameter (approximately 300mm), a size standard used in the semiconductor industry for the mass ... 2025-05-06 20:41:54
... Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with a diamond-like ... 2025-05-06 20:41:43
SiC Single crystal resistance heating crystal growth furnace for 6inch 8inch 12inch SiC wafers manufacture SiC single crystal growth furnace's ... 2025-05-06 20:43:51
SiC Ingot growth Furnace PVT HTCVD LPE single crystal SiC Boule growth furnace for 6inch 8inch SiC wafers product SiC Ingot growth Furnace's abstract ... 2025-05-06 20:43:53
The 6-inch Conductive Single-Crystal SiC on Polycrystalline SiC Composite Substrate Abstract of the 6-inch Conductive Single-Crystal SiC on Polycrysta... 2025-05-13 05:30:20
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