431 - 440 of 440 Selling leads
Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS High frequency ...
2024-12-09 20:24:57
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ...
2024-12-09 20:24:57
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SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A ...
2024-12-09 20:24:57
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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 20:24:57
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction ...
2024-12-09 20:24:57
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 20:24:57
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ...
2024-12-09 20:24:57
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 20:24:57
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 20:24:57
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 20:24:57
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