191 - 200 of 440 Selling leads
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R6 High Power Schottky Diode Solar Diode 30SQ045 Features Schottky Barrier ChipHigh Thermal Reliabilty Patented Super Barier Rectifier Technolog·High ...
2024-12-09 21:36:46
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Photovoltaic junction box diode 15SQ045 solar bypass diode FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0, ...
2024-12-09 21:36:46
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ ...
2024-12-09 21:36:46
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SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A ...
2024-12-09 21:36:46
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MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE Low Leakage High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:36:46
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction ...
2024-12-09 21:36:46
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 21:36:46
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ...
2024-12-09 21:36:46
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 21:36:46
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:36:46
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