China Sapphire Optical Window manufacturer
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
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No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

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Chongqing Silian Optoelectronic Science & Technology Co., Ltd.

City: chongqing

Province/State:chongqing

Country/Region:china

Tel:86--4008310499

Contact Person:
Ms.Wu
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No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance

Brand Name Silian
Model Number Customized
Certification SGS/ ISO
Place of Origin Chongqing,China
Minimum Order Quantity 500pcs
Price Negotiable
Payment Terms Western Union, T/T, MoneyGram
Supply Ability 20,000 pcs/month
Delivery Time 5-8 weeks
Packaging Details 1pcs/12pcs/25 pcs
Diameter 150.1±0.1
Flat Length 47.5±1
Bow 0 ~ (-10) um
Color Transparent; other colors
Material High Purity and Monocrystalline AL2O3
Surface Crystal Orientation C-Plane 0°±0.1°
Primary Flat Orientation A-plane 0°±0.5°
Broke Edge ≤3mm
Detailed Product Description

6-inch sapphire substrate with good light transmittance

 

Product Description

 

The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.

 

Technical Specification

 

PropertiesUnit6 inch substrate
Diametermm150.1±0.1
Flat Lengthmm47.5±1
MaterialHigh Purity and Monocrystalline AL2O3
Surface Crystal OrientationC-Plane 0°±0.1°
Primary Flat OrientationA-plane 0°±0.5°
Broke Edge≤3mm
CrackNo Cracking
DefectNo Wrappage,Twin Crystal or Crystal Boundary
EPD<1000/cm²

 

Performance research

 

The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.

 

 

Product Tags: SGS Al2O3 6 inch sapphire wafer   SGS No Cracking 6 inch sapphire wafer   SGS 150mm flat sapphire crystal  
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