No Cracking 6 Inch Sapphire Wafer With Good Light Transmittance
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6-inch sapphire substrate with good light transmittance
Product Description
The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.
Technical Specification
Performance research
The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.
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| Product Tags: SGS Al2O3 6 inch sapphire wafer SGS No Cracking 6 inch sapphire wafer SGS 150mm flat sapphire crystal | ||||||||||||||||||||||||||||||
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