361 - 370 of 478
silicon carbide power modules 1200v
Selling leads
|
...Modules FS03MR12A6MA1BBPSA1 Mosfet Array 6N Channel 3 Phase Bridge Detailed Description Of FS03MR12A6MA1BBPSA1 FS03MR12A6MA1BBPSA1 is a very ...
2025-07-15 00:20:33
|
|
...1200V CoolSiC Module FF23MR12W1M1B11BOMA1 Automotive IGBT Modules 50A 20mW Product Description Of FF23MR12W1M1B11BOMA1 FF23MR12W1M1B11BOMA1 Dual ...
2025-07-15 00:20:33
|
|
...Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module Product Description Of FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 is Dual 1200V ...
2025-07-15 00:20:33
|
|
1200V Full Bridge IGBT Module F423MR12W1M1B11BOMA1 Automotive IGBT Modules 20mW Product Description Of F423MR12W1M1B11BOMA1 F423MR12W1M1B11BOMA1 is ...
2025-07-15 00:20:33
|
|
...SiC) power module. Very low stray inductance, Outstanding performance at high frequency operation. Specification Of MSCSM120SKM11CT3AG Part Number ...
2024-12-09 22:12:14
|
|
...Modules FP150R12N3T7B11BPSA1 1200V 150A 20mW Chassis Mount Product Description Of FP150R12N3T7B11BPSA1 FP150R12N3T7B11BPSA1 a significant increase ...
2025-07-15 00:20:33
|
|
...Operating Temperature: -40°C ~ 175°C (TJ) Type: IGBTs - Modules Supplier Device Package: AG-ECONOD Features Of FF900R12ME7PB11 Highest power ...
2025-07-15 00:20:33
|
|
...(Silicon Carbide Schottky). Package is D²PAK (TO-263). Specification Of FFSB20120A-F085 Part Number: FFSB20120A-F085 Capacitance @ Vr, F: 1220pF @ ...
2025-07-14 00:19:59
|
|
...available in a D2PAK real 2-pin package. Specification Of IDK02G120C5XTMA1 Part Number IDK02G120C5XTMA1 Product Status Active Technology SiC ...
2025-07-15 00:21:21
|
|
Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V Product Description Of TW015N120C,S1F TW015N120C,S1F is Silicon ...
2025-07-14 00:20:06
|