China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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Mr.Sales Manager
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761 - 770 of 1810

sic mosfet power module

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... junction to case thermal resistance. Specification Of MSCSM120AM03CT6LIAG Part Number MSCSM120AM03CT6LIAG Input Capacitance (Ciss) (Max) @ Vds ... 2025-07-31 00:21:52
IGBT Modules MSCSM120DDUM31CTBL2NG Mosfet Array 1200V 79A 310W Transistors Product Description Of MSCSM120DDUM31CTBL2NG MSCSM120DDUM31CTBL2NG modules ... 2024-12-09 22:24:04
...Silicon Carbide Modules​, Chassis Mount. ​Specification Of FS45MR12W1M1B11BOMA1 Part Number: FS45MR12W1M1B11BOMA1 VDSS: 1200V ID Nom: 25A IDRM: 50A ... 2025-07-31 00:21:52
Automotive IGBT Modules FF6MR12KM1PHOSA1 1200V CoolSiC MOSFET 2N-Channel Module​ Product Description Of FF6MR12KM1PHOSA1 FF6MR12KM1PHOSA1 is 62mm C... 2025-07-31 00:21:52
..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide ... 2025-07-31 00:21:52
Screw Mounts Automotive IGBT Modules 79A 310W Mosfet Transistors Automotive IGBT Modules MSCSM120DUM31CTBL1NG Mosfet 79A 310W Transistors Product ... 2024-12-09 22:24:04
...SiC SBD SIC Integrated Circuit Chip TO-247-2 SiC Schottky​ Product Description Of MSC030SDA330B MSC030SDA330B The silicon carbide (SiC) power ... 2025-07-31 00:22:44
...Mosfet Array 20mW, Chassis Mount. ​Specification Of FF11MR12W1M1PB11BPSA1 Part Number: FF11MR12W1M1PB11BPSA1 IDRM: 200A COSS Stored Energy: 176 µJ ... 2025-07-31 00:21:52
Automotive IGBT Modules MSCC60AM23C4AG Modules 600V 2N-Channel MOSFET Modules [MJD Advantage] + 15 years experience for electronic components + Secure ... 2024-12-09 23:45:30
Automotive IGBT Modules F4-33MR12W1M1H-B76 CoolSiC MOSFET Module 1200V IGBT Module [MJD Advantage] + 15 years experience for electronic components + ... 2025-02-25 00:27:18
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