Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1
Automotive IGBT Modules
Product Description Of DF17MR12W1M1HFB68BPSA1
DF17MR12W1M1HFB68BPSA1 is N-Channel Silicon Carbide Junction
Transistor, 1200 V 45A (Tj) 20mW, Chassis Mount.
Specification Of DF17MR12W1M1HFB68BPSA1
| Part Number: | DF17MR12W1M1HFB68BPSA1 | Technology: | SiC (Silicon Carbide Junction Transistor) |
|---|
| Drain To Source Voltage (Vdss): | 1200V | Vgs(Th) (Max) @ Id: | 5.15V @ 20mA |
|---|
| Power - Max: | 20mW | Package / Case: | Module |
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Features Of DF17MR12W1M1HFB68BPSA1
- Power Dissipation (Max): 20mW
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Drain to Source Voltage (Vdss): 1200 V
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample
free?
A: Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without
stock,we will confirm lead time for you based on your order
quantity.
