China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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sic mosfet power module

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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Mr.Sales Manager
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1731 - 1740 of 1810

sic mosfet power module

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...Surface Mount 650V 45A Transistors Product Description Of SCTH35N65G2V-7AG SCTH35N65G2V-7AG Power MOSFET is a high voltage N-channel Power MOSFET ... 2025-07-14 00:20:06
...scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching ... 2025-07-23 00:18:16
... Mount. The package is D²PAK-2 (TO-263-2). Specification Of FFSB0665B-F085 Part Number: FFSB0665B-F085 Reverse Recovery Time (Trr): 0 Ns Power ... 2025-07-23 00:18:35
... Of IAUTN06S5N008 IAUTN06S5N008 is N-channel OptiMOS™ power MOSFET Transistors for automotive applications. Specification Of IAUTN06S5N008 Part ... 2025-07-23 00:18:51
... to the superjunction (SJ) principle pioneered. Specification Of IPDQ60R040S7A Part Number IPDQ60R040S7A Product Status Active FET Type N-Channel ... 2025-07-23 00:18:44
... frequency, increased power density, reduced EMI, and reduced system size and cost. Specification Of FFSH5065B-F085 Part Number FFSH5065B-F085 ... 2025-07-23 00:18:53
..., System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. ... 2025-07-23 00:18:53
... Dual Silicon Carbide Schottky Barrier Diodes 1200V​ Product Description Of MSC2X50SDA120J MSC2X50SDA120J is Silicon Carbide (SiC) power Schottky ... 2025-07-14 00:20:06
... is a 1200 V, 50 A SiC SBD in a two-lead TO-247 package. Specification Of MSC050SDA120B Part Number: MSC050SDA120B Current - Average Rectified (Io)... 2025-07-23 00:18:51
...the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Specification Of ... 2025-07-14 00:20:03
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