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sic mosfet power module
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...247-4 Silicon Carbide Junction Transistor Product Description Of IMYH200R075M1H IMYH200R075M1H is CoolSiC™ 2000 V SiC Trench MOSFET, Silicon ...
2025-07-19 00:24:44
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...Description Of MSC750SMA170B4 MSC750SMA170B4 is N-Channel Single FETs MOSFETs Transistors, package is TO-247-4, Through Hole. Specification Of ...
2025-07-14 00:20:07
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IGBT Modules Diodes Rectifiers MSCDR90A160BL1NG Diode Array 1 Pair Series Connection Product Description Of MSCDR90A160BL1NG MSCDR90A160BL1NG diode ...
2024-12-09 22:24:04
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Integrated Circuit Chip IMZA65R039M1H Silicon Carbide TO-247-4 N-Channel Transistors Product Description Of IMZA65R039M1H IMZA65R039M1H is 650V ...
2025-07-19 00:24:43
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... and reduced EMI. Specification Of IDWD40G120C5XKSA1 Part Number: IDWD40G120C5XKSA1 Product: Schottky Silicon Carbide Diodes Mounting Style: ...
2025-07-19 00:24:39
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...Circuit Chip TO-263-8 Product Description Of IMBG65R039M1HXTMA1 IMBG65R039M1HXTMA1 is N-Channel 650V CoolSiC M1 SiC Trench Power Device, built ...
2025-07-14 00:20:06
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...Module ESP32-S3-WROOM-1U-N8R8 2.4GHz Multiprotocol Modules Product Description Of ESP32-S3-WROOM-1U-N8R8 ESP32-S3-WROOM-1U-N8R8 includes a high...
2024-12-09 22:24:04
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..., Package is DFN8 5x6. Specification Of NTMFSC0D9N04CL Part Number: NTMFSC0D9N04CL Configuration: Single Fall Time: 111 ns Product Type: MOSFET ...
2025-07-14 00:20:03
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..., Surface Mount, package is 8-LFPAK. Specification Of NVMJS2D5N06CLTWG Part Number: NVMJS2D5N06CLTWG Size: 5mm X 6mm Power Dissipation (Max): 3.9W ...
2025-07-14 00:19:57
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...Channel 153W Transistors Through Hole Product Description Of SCT20N120AG SCT20N120AG is N-Channel Power MOSFET is a very high voltage N-channel ...
2025-07-14 00:20:06
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