81 - 90 of 299
fast charging chip
Selling leads
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...Chip Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specificat...
2026-10-24 00:39:13
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... Oxide) Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 7 nC @
2026-10-24 00:39:56
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...Chip IAUT260N10S5N019 N-Channel 100V 260A 300W Surface Mount Transistors Product Description Of IAUT260N10S5N019 IAUT260N10S5N019 is N-Channel 100 ...
2026-10-24 00:39:11
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...-8-1. Specification Of IAUT150N10S5N035 Part Number: IAUT150N10S5N035 Power Dissipation (Max): 166W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ ...
2026-10-19 00:09:03
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...Chip MSC017SMA120 N-Channel 113A Through Hole Transistors Product Description Of MSC017SMA120 MSC017SMA120 MOSFETs provide high efficiency to ...
2026-10-19 00:09:03
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..., and thermal capacitance ratings at low reverse current for lower switching loss. Specification Of MSC360SMA120 Part Number: MSC360SMA120 Gate ...
2026-10-19 00:09:03
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... Rds On (Max) @ Id, Vgs 111mOhm @ 11.2A, 18V Vgs(th) (Max) @ Id 5.7V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs 19 nC @ 18 V Vgs (Max) +20V, -2V Features ...
2026-10-24 00:39:20
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... Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V Vgs(th) (Max) @ Id 5.7V @ 11mA Gate Charge (Qg) (Max)
2026-10-19 00:09:03
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... (Ciss) (Max) @ Vds 1393 pF @ 400 V Technology SiCFET (Silicon Carbide) Vgs (Max) +20V, -2V Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
2026-10-19 00:09:03
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Integrated Circuit Chip AFE2256TDU 16 Bit Data Acquisition Analog Front End Product Description Of AFE2256TDU AFE2256TDU device includes 256 ...
2026-10-24 00:39:13
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