101 - 110 of 287
fast charging chip
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... efficiency. Specification Of NTH4L027N65S3F Part Number NTH4L027N65S3F Vgs (Max) ±30V Gate Charge (Qg) (Max) @ Vgs 259 nC @ 10 V Vgs(th) (Max) @ ...
2026-06-21 00:24:29
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...Chip NVMFS5C612NWFT1G N-Channel Single MOSFETs Transistors Product Description Of NVMFS5C612NWFT1G NVMFS5C612NWFT1G is Power MOSFET Single N...
2026-06-21 00:24:29
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...Chip IXBH20N360HV Single IGBT Transistors Through Hole Product Description Of IXBH20N360HV IXBH20N360HV IGBTs offer advantages such as high power ...
2026-06-21 00:24:27
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...Chip IXYK110N120B4 Single IGBT Transistors Through Hole Product Description Of IXYK110N120B4 IXYK110N120B4's low thermal resistance of Rth(j-c) ...
2026-06-16 00:14:46
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... VCE(sat), and for switching frequency of up to 5kHz. Thin wafer technology and improved processes enable a low gate charge QG, hence, low gate ...
2026-06-21 00:24:29
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...Chips MT62F768M64D4CZ-023 AAT:C Automotive LPDDR5X SDRAM Memory IC Product Description Of MT62F768M64D4CZ-023 AAT:C MT62F768M64D4CZ-023 AAT:C More ...
2026-06-21 00:23:47
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...Chip TO-263-7L SiC Power MOSFET Product Description Of SCT4026DW7HRTL SCT4026DW7HRTL is Low on-resistance Automotive Grade N-channel SiC power ...
2026-06-21 00:24:30
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...Chip SCTWA60N120G2-4 Silicon carbide Power MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a ...
2026-06-21 00:23:33
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...Chip TW027N65C,S1F N-Channel Transistors TO-247-3 Silicon Carbide Product Description Of TW027N65C,S1F TW027N65C,S1F is 650V 58A(Tc) 156W (Tc) ...
2026-06-21 00:24:30
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...Chip SCT30N120H N-Channel 1200V Single MOSFETs Transistors Product Description Of SCT30N120H SCT30N120H is N-Channel 1200 V 40A (Tc) 270W (Tc) ...
2026-06-21 00:24:30
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