China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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bga package power amplifier chip

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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bga package power amplifier chip

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Integrated Circuit Chip NTMFS011N15MC 150V Power Single N-Channel Transistor 8PQFN​ Product Description Of NTMFS011N15MC NTMFS011N15MC is 150V, 78A ... 2025-07-23 00:18:52
..., Surface Mount, package is 8-LFPAK. Specification Of NVMJS2D5N06CLTWG Part Number: NVMJS2D5N06CLTWG Size: 5mm X 6mm Power Dissipation (Max): 3.9W ... 2025-07-23 00:18:52
Integrated Circuit Chip MSC035SMA070 Silicon Carbide N-Channel Power MOSFET Product Description Of MSC035SMA070 The MSC035SMA070 device is a 700 V, 35 ... 2025-07-24 00:25:04
...Power Transistor 8-PowerVDFN Integrated Circuit Chip​ Product Description Of IAUC60N04S6N031H IAUC60N04S6N031H is based on the optimized OptiMOS™6 ... 2025-07-24 00:25:03
...Chips​ Product Description Of AD2435WCCPZY21-RL AD2435WCCPZY21-RL is a single main node, multiple subordinate node system where the transceiver at ... 2025-07-23 00:18:47
...Chip​ Product Description Of MSC180SMA120S MSC180SMA120S is a 1200 V, 180 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package. ... 2025-07-14 00:20:07
Integrated Circuit Chip MSC025SMA120J N-Channel Power MOSFET Transistors Product Description Of MSC025SMA120J MSC025SMA120J combine a formidable array ... 2025-07-24 00:25:01
...package. Specification Of MSC015SMA070S Part Number: MSC015SMA070S FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain To Source Voltage ... 2025-07-14 00:20:07
...Chip IMBG65R107M1HXTMA1 N-Channel 650V MOSFETs Transistors​ Product Description Of IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 is 650V CoolSiC M1 SiC ... 2025-07-14 00:20:06
...h very low on-resistance and small package size, make OptiMOS™ 25V the best choice for demanding server, datacom, and communication voltage ... 2025-07-24 00:24:37
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