China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

Contact Person:
Mr.Sales Manager
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1381 - 1390 of 1978

automotive power architecture mcu

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... IC(nom) / IF(nom): 800 A IC max: 800 A Qualification: Industrial Technology: IGBT7 - E7 Features Of FF800R12KE7HPSA1 Highest power density Best-in 2024-12-09 21:19:45
Automotive IGBT Modules FS380R12A6T4LB 870W Chassis Mount IGBT Modules Product Description Of FS380R12A6T4LB FS380R12A6T4LB's power module implements ... 2025-07-14 00:19:17
... FS660R08A6P2FLB onfiguration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 750 V Current - Collector (Ic) (Max) 450 A Power - ... 2025-07-14 00:19:17
High Performance FS820R08A6P2 714 W Chassis Mount Automotive IGBT Modules Product Description Of FS820R08A6P2 FS820R08A6P2 show excellent light load ... 2025-07-14 00:19:17
...Automotive IGBT Modules 20mW 2N-Channel​ Product Description Of DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 is Booster 1200 V CoolSiC™ MOSFET ... 2025-07-14 00:19:17
Automotive IGBT Modules FF600R12ME4WB73BPSA1 600A Transistors IGBT Modules Product Description Of FF600R12ME4WB73BPSA1 FF600R12ME4WB73BPSA1 is ... 2025-07-14 00:19:17
... (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V Vgs(Th) (Max) @ Id: 5.15V @ 20mA Power - 2025-07-14 00:19:17
...Automotive IGBT Modules 1200V Silicon Carbide Product Description Of FF6MR12W2M1B11BOMA1 FF6MR12W2M1B11BOMA1 is 2 N-Channel (Dual) Silicon Carbide ... 2025-07-14 00:19:17
Automotive IGBT Modules FP150R12N3T7B11BPSA1 1200V 150A 20mW Chassis Mount Product Description Of FP150R12N3T7B11BPSA1 FP150R12N3T7B11BPSA1 a ... 2025-07-14 00:19:17
...Automotive IGBT Modules 50A 20mW​ Product Description Of FF23MR12W1M1B11BOMA1 FF23MR12W1M1B11BOMA1 Dual 1200V/23mΩ half bridge Module using CoolSiC ... 2025-07-14 00:19:17
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