China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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two channel highside power switch

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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two channel highside power switch

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Product Attributes Product Status Active Switch Type General Purpose Number of Outputs 1 Ratio - Input:Output 1:1 Output Configuration High Side ... 2024-12-09 21:22:44
LM3481MM electronics ic chips High Efficiency Low Side N Channel Controller General Description The LM3481 is a versatile Low-Side N-FET high ... 2024-12-09 22:38:25
...CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V ... 2024-12-09 22:37:32
...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile ( 2024-12-09 22:41:27
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are ... 2024-12-09 22:38:38
...Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching ... 2024-12-09 22:41:39
...Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using ... 2024-12-09 22:41:27
...Channel 1.8V Specified PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = ... 2024-12-09 22:38:51
...CHANNEL ENHANCEMENT MODE MOSFET IN DPAK SUMMARY V(BR)DSS=100V : RDS(on)=0.085 ; ID=7.7A DESCRIPTION This new generation of Trench MOSFETs from ... 2024-12-09 22:41:27
... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is ... 2024-12-09 22:37:47
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