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silicon power transistors
Selling leads
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...power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to ...
2024-12-09 22:59:53
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...PROGRAMMABLE PERIPHERAL INTERFACE FEATURES: • High speed and low power consumption due to 3m silicon gate CMOS technolog y • 3 V to 6 V single ...
2024-12-09 22:41:39
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... ■ Low input current: 1 µA maximum General Description The MM74HC04 inverters utilize advanced silicon-gate CMOS technology to achieve operating ...
2024-12-09 22:43:31
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General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS ...
2024-12-09 22:38:51
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MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR FEATURES: • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT2222A) • ...
2024-12-09 22:41:27
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... concepts for quality audio and data signal processing applications. This device family incorporates the use of high frequency PNP input transistor...
2024-12-09 22:42:04
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...% Rated Power: 0.01w~1.2w Temperature Coefficient: 250ppm Operating Temperature: -55℃~200℃ Color: blue Varistor Voltage: 470(423~...
2024-12-09 22:48:58
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...: Transistor, diode, IC Resistance: 0.01 -100K, 0.01 -100K Tolerance: -55℃~200℃ Place of Origin: China Brand Name: ZOV Model Number: 14D471K Type: ...
2024-12-09 22:48:58
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... range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a ...
2024-12-09 22:59:53
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... The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon ...
2024-12-09 22:37:32
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