321 - 330 of 918
rmii ethernet switch ic
Selling leads
IRF9540, RF1S9540SM 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. ...
2024-12-09 22:38:38
|
IRFZ34NPbF HEXFET® Power MOSFET • Advanced Process • Technology Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast ...
2024-12-09 22:38:51
|
...switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter ...
2024-12-09 22:38:51
|
N-Channel 150-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • New Low Thermal Resistance ...
2024-12-09 22:41:27
|
...switching power mosfet FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ABSOLUTE MAXIMUM RATINGS ...
2024-12-09 22:41:27
|
...: BC859, BC860 • Complement to BC846 ... BC850 Typical Characteristics Symbol Parameter Value Units VEBO Emitter-Base Voltage -5 V IC Collector ...
2024-12-09 22:41:27
|
... Units VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC)
2024-12-09 22:41:39
|
Silicon PIN Photodiode with Very Short Switching Time Features ● Especially suitable for applications from 380 nm to 1100 nm (SFH 229) and of 880 nm ...
2024-12-09 22:41:39
|
LM2622MM-ADJ 600kHz/1.3MHz Step-up PWM DC/DC Converter General Description The LM2622 is a step-up DC/DC converter with a 1.6A, 0.2Ω internal switch ...
2024-12-09 22:41:39
|
... (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA) • Suitable for driver stage of small motor • Complementary to 2SC3265 • Small package Note: ......
2024-12-09 22:41:39
|