China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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power mosfet driver

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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631 - 640 of 750

power mosfet driver

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... • High efficiency buck-boost transition • Adjustable switching frequency • Optional frequency sync and dithering • Integrated 2-A MOSFET gate ... 2026-01-05 15:51:23
...extremely high isolation 5,000 Vrms I/O isolation available. 4. Low-level off state leakage current 5. Eliminates the need for a power supply to ... 2026-01-05 15:51:23
... for increased integration and reliability in switch-mode power supplies. It incorporates a primary control and drive circuit with an avalanche... 2026-01-05 15:51:23
... for increased integration and reliability in switch-mode power supplies. It incorporates a primary control and drive circuit with an avalanche... 2026-01-05 15:51:23
... for increased integration and reliability in switch-mode power supplies. It incorporates a primary control and drive circuit with an avalanche... 2026-01-05 15:51:23
...normally open solid-state relay that can replace electromechanical relays in many applications. It utilizes International Rectifier’s HEXFET power ... 2026-01-05 15:51:23
...Power Diode ♦ Controls N-Channel MOSFET ♦ 0V to 18V Supply ORing or Holdup ♦ 0.5μs Turn-On and Turn-Off Time ♦ Undervoltage and Overvoltage ... 2026-01-05 15:51:23
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ... 2026-01-05 15:51:23
... Power Schottky Diodes • Controls N-Channel MOSFETs • 0.3μs Turn-Off Time Limits Peak Fault Current • Wide Operating Voltage Range: 9V to 80V • ... 2026-01-05 15:51:23
HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT ... 2026-01-05 15:51:23
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