HGTG11N120CND NPT GBT Anti Parallel Hyperfast Diode 43A 1200V
|
Detailed Product Description
|
HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V
Description :
The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49303. Features : • 43A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . .340ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model |
| Product Tags: IGBT Anti Parallel Hyperfast Diode NPT Anti Parallel Hyperfast Diode HGTG11N120CND |
Related Products
|
Original Connect RJ45 Ethernet Jack Plug J00-0065NL for PBC Board |
|
PTH04000WAH NEW AND ORIGINAL STOCK |
|
UPS161 Synchronizing signal controlling CMOS LSI tv circuit boards led driver circuit board |
|
BSM100GB60DLCHOSA1 NEW AND ORIGINAL STOCK |
|
FF150R12RT4HOSA1 NEW AND ORIGINAL STOCK |
|
FF100R12RT4HOSA1 NEW AND ORIGINAL STOCK |
Email to this supplier