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n channel mosfet transisto
Selling leads
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... of driving up to 3A loads with excellent line and load regulation characteristics. High efficiency (>90%) is obtained through the use of a low ON...
2024-12-09 22:42:04
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... 1.2V and 14V and con- verts it into a regulated output voltage. The output voltage can be adjusted between 1.24V and 14V. It has an internal 0.17Ω ...
2024-12-09 22:42:04
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... from 1.25V to VIN ♦ Output Currents Up to 125mA (MAX1836) or 250mA (MAX1837) ♦ Internal P-Channel MOSFET ♦ Efficiency Over 90% ♦ 12µA Quiescent ...
2024-12-09 22:59:53
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...Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member ...
2024-12-09 22:48:58
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...Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member ...
2024-12-09 22:59:53
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库存2N7002DW K27 72K 2N7002 7002 SOT363贴片晶体管2n 7002 702/7002 SOT-23 2n 7002 lt 2n 7002 7002N沟道MOSFET 2N7000 / 2N7002 / NDS7002AN-Channel Enhancement ...
2024-12-09 22:37:32
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...Non-Inverting Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced ...
2024-12-09 22:37:47
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...single monolithic, inverting bootstrap driver. Its floating Level Shifter Section is optimized for the control of N-Channel Power MOSFETs in high ...
2024-12-09 22:37:59
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BD9703FP-E2 Simple Step-down Switching Regulators with Built-in Power MOSFET ●Description The BD9701/BD9703/BD9702 are single-channel step-down ...
2024-12-09 22:41:27
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... Enhanced Power Switch High Speed Switching Diode Features ■ 80mΩ HIGH-SIDE MOSFET SWITCH ■ 1000mA CONTINUOUS CURRENT PER CHANNEL ■ INDEPENDENT ...
2024-12-09 22:42:04
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