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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ixfk140n30p polar power mosfet

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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ixfk140n30p polar power mosfet

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.... When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board ... 2024-12-09 22:41:39
... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is ... 2024-12-09 22:37:47
...Mosfet Power Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V,ID =-1... 2024-12-09 22:37:47
CSD17573Q5B Mosfet Power Transistor MOSFET 30V, N-channel NexFET Pwr MOSFET 1 Features Low Qg and Qgd Ultra-Low RDS(on) Low-Thermal Resistance ... 2024-12-09 22:37:47
... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ... 2024-12-09 22:37:47
SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − ... 2024-12-09 22:38:51
Features • Input Voltage Range: 5 to 16 V • Six Integrated MOSFETs With 1.5-A Continuous Output Current • Total Driver H + L RDSON 450 mΩ • Sensorless ... 2024-12-09 21:22:44
Dual 3A-Peak Low-Side MOSFET Driver Features • Reliable, low-power bipolar/CMOS/DMOS construction • Latch-up protected to >500mA reverse current • ... 2024-12-09 22:41:39
CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs FEATURES CommonSourceConn ection Ultr a L o w Drain to Drain On-Resistance ... 2024-12-09 22:37:47
...Mosfet Power Transistor MOSFET NFET 30V 191A 2MOHM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses ... 2024-12-09 22:37:47
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