NTMFS4833NT1G Mosfet Power Transistor MOSFET NFET 30V 191A 2MOHM

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain Current RqJA (Note 1)

Steady State

TA = 25°C

ID

28

A

TA = 85°C

20.5

Power Dissipation RqJA (Note 1)

TA = 25°C

PD

2.7

W

Continuous Drain Current RqJA (Note 2)

TA = 25°C

ID

16

A

TA = 85°C

12

Power Dissipation RqJA (Note 2)

TA = 25°C

PD

1.1

W

Continuous Drain Current RqJC (Note 1)

TC = 25°C

ID

191

A

TC = 85°C

138

Power Dissipation RqJC (Note 1)

TC = 25°C

PD

113.6

W

Pulsed Drain Current

TA = 25°C, tp =10ms

IDM

288

A

Operating Junction and Storage Temperature

TJ, TSTG

−55 to +150

°C

Source Current (Body Diode)

IS

104

A

Drain to Source dV/dt

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche Energy(TJ =25°C,VDD =30V,VGS =10V, IL = 35 Apk, L = 1.0 mH, RG = 25 W)

EAS

612.5

mJ

Lead Temperature for Soldering Purposes (1/8′′ from case for 10 s)

TL

260

°C