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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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irfp260mpbf power mosfet

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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irfp260mpbf power mosfet

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High Current Lead Mounted Rectifiers Features • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case ... 2024-12-09 22:41:27
STA434A PNP + NPN DarliCM GROUPon H-bridge Absolute maximum ratings Symbol Specification Unit NPN PNP VCBO 80 -60 V VCEO 60 -60 V VEBO 6 -6 V IC 4 -4 ... 2024-12-09 22:41:27
BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ... 2024-12-09 22:41:27
NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS ... 2024-12-09 22:41:27
ULN2803APG,ULN2803AFWG,ULN2804APG,ULN2804AFWG (Manufactured by Toshiba Malaysia) The ULN2803APG / AFWG Series are high−voltage, high−current darliCM ... 2024-12-09 22:41:27
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON... 2024-12-09 22:41:27
TDA7266SA 7W+7W DUAL BRIDGE AMPLIFIER ■ WIDE SUPPLY VOLTAGE RANGE (3.5-18V) TECHNOLOGY BI20II ■ MINIMUM EXTERNAL COMPONENTS – NO SWR CAPACITOR – NO ... 2024-12-09 22:41:27
PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial ... 2024-12-09 22:41:27
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 12 A @ 90°C 20 A @ 25°C 1200 ... 2024-12-09 22:41:27
Switching (200V, 10A) RDN100N20 Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. ... 2024-12-09 22:41:27
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