China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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high power igbt module

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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1691 - 1700 of 1874

high power igbt module

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...highly integrated, low power inertial measurement unit (IMU) that provides precise acceleration and angular rate (gyroscopic) measurement. The ... 2024-12-09 22:37:47
..., high efficiency • Low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 ... 2024-12-09 22:37:59
...low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels to output voltage levels that swing within 25mV ... 2024-12-09 22:37:59
... of ANSI Standard TIA/EIA−485−A and ISO 8482:1987(E) • High-Speed Low-Power LinBiCMOS™ Circuitry • Designed for High-Speed Operation in Both Serial ... 2024-12-09 22:37:59
... OUTPUT HC373 NON INVERTING - HC533 INVERTING FEATURES: HIGH SPEED tPD = 11 ns (TYP.) AT VCC =5V . LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = ... 2024-12-09 22:38:25
... HIGH mutually exclusive outputs • Output capability: standard • ICC category: MSI GENERAL DESCRIPTION The 74HC/HCT238 are high-speed Si-gate CMOS ... 2024-12-09 22:38:25
... to achieve speed performance similar to LS-TTL logic while retaining the low power and high noise immunity of CMOS. The MM74HC4060 is a 14-stage ... 2024-12-09 22:38:25
..., which is based on the ARM7TDMI processor core. This processor has a high-performance 32-bit RISC architecture with a high-density 16-bit ... 2024-12-09 22:38:25
...power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been ... 2024-12-09 22:38:51
... Diodes 1N5333B – 1N5388B Features • Glass passivated junction • Complete voltage range 3.3 to 200V • High peak reverse power dissipation • High ... 2024-12-09 22:41:27
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