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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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high frequency transistor

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2SC5508-T2B NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FEATURES • Ideal for low-noise, high-gain amplification applications • NF ... 2024-12-09 22:38:25
2SB1151-Y LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors „ FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) ... 2024-12-09 22:41:27
...High Speed Optocouplers 1 Mb/s 3750Vrms Description These diode-transistor optocouplers use an insulating layer between a LED and an integrated ... 2024-12-09 22:37:47
FFA60UA60DN Mosfet Power Transistor Rectifiers 600V, 60A TO3P Rectifier 1 Features Ultrafast Recovery, Trr = 90ns (@ IF = 30 A) Max Forward Voltage, ... 2024-12-09 22:37:47
..., Switching High-speed switching diodes This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - ... 2024-12-09 22:37:47
... Transistor Diodes - General Purpose, Power, Switching SW 75V 250MA HS Features and benefits  High switching speed: trr  4 ns  Low leakage ... 2024-12-09 22:37:47
...Transistor MOSFET -30V P-Channel Power Trench Features Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max r = 18 mΩ at V = -4.5 V, I = -8.5 A DS... 2024-12-09 22:37:47
FDC3535 Mosfet Power Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V... 2024-12-09 22:37:47
... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is ... 2024-12-09 22:37:47
...Transistor MOSFET 100V NCh PowerTrench General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency ... 2024-12-09 22:37:47
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