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DM0565R Power Mosfet Transistor Green Mode Fairchild Power Switch (FPS)

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Country/Region:china

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DM0565R Power Mosfet Transistor Green Mode Fairchild Power Switch (FPS)

Model Number DM0565R
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7500pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description IC OFFLINE SW FLBACK TO220F-6L
Drain-source voltage 650 V
Vstr Max Voltage 650 V
Single pulsed avalanche energy 190 mJ
Supply voltage 20 V
Input voltage -0.3 to VCC V
Storage temperature -55 to +150 °C
Detailed Product Description

 

FSDM0565R Green Mode Fairchild Power Switch (FPSTM)

 

Features

• Internal Avalanche Rugged Sense FET

• Advanced Burst-Mode operation consumes under 1 W at 240VAC & 0.5W load

• Precision Fixed Operating Frequency (66kHz)

• Internal Start-up Circuit

• Pulse by Pulse Current Limiting

• Abnormal Over Current Protection (AOCP)

 

• Over Voltage Protection (OVP)

• Over Load Protection (OLP)

• Internal Thermal Shutdown Function (TSD)

• Auto-Restart Mode

• Under Voltage Lock Out (UVLO) with hysteresis

• Low Operating Current (2.5mA)

• Built-in Soft Start

 

Application

• SMPS for LCD monitor and STB

• Adaptor

 

Description

The FSDM0565R is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated high voltage power switching regulator which combine an avalanche rugged Sense FET with a current mode PWM control block.

 

The PWM controller includes integrated fixed frequency oscillator, under voltage lockout, leading edge blanking (LEB), optimized gate driver, internal soft start, temperature compensated precise current sources for a loop compensation and self protection circuitry. Compared with discrete MOSFET and PWM controller solution, it can reduce total cost, component count, size and weight simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform well suited for cost effective designs of flyback converters.

 

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

ParameterSymbolValueUnit
Drain-source voltageVDSS650V
Vstr Max VoltageVSTR650V
Pulsed Drain current (Tc=25°C)(1)IDM11ADC
Continuous Drain Current(Tc=25°C)ID2.8A
Continuous Drain Current(Tc=100°C)1.7A
Single pulsed avalanche energy (2)EAS190mJ
Single pulsed avalanche current (3)IAS-A
Supply voltageVCC20V
Input voltage rangeVFB-0.3 to VCCV
Total power dissipation(Tc=25°C)PD(Watt H/S)45W
Operating junction temperatureTJInternally limited°C
Operating ambient temperatureTA-25 to +85°C
Storage temperature rangeTSTG-55 to +150°C
ESD Capability, HBM Model (All pins excepts for Vstr and Vfb)-2.0 (GND-Vstr/Vfb=1.5kV)kV
ESD Capability, Machine Model (All pins excepts for Vstr and Vfb)-300 (GND-Vstr/Vfb=225V)V

Notes:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L=14mH, starting Tj=25°C

3. L=13uH, starting Tj=25°C

 

Typical Circuit

 

 

Internal Block Diagram

 

 

 

 

 

 

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Product Tags: power mosfet ic   multi emitter transistor  
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