China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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1g bit flash memory ic

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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1g bit flash memory ic

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512K I2C™ CMOS Serial EEPROM DEVICE SELECTION TABLE Part Number VCC Range Max Clock Frequency Temp Ranges 24AA512 1.7-5.5V 400 kHz(1) I 24LC512 2.5-5... 2024-12-09 22:41:39
128K I2C™ CMOS Serial EEPROM Device Selection Table Part Number VCC Range Max. Clock Frequency Temp. Ranges 24AA128 1.7-5.5V 400 kHz(1) I 24LC128 2.5... 2024-12-09 22:41:39
3-wire Serial EEPROMs 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16) AT93C56A AT93C66A Features • Low-voltage and Standard-voltage Operation – 2.7 ... 2024-12-09 22:42:04
AT28C256-15PU Intergreated Chip 256K (32K x 8) Paged Parallel EEPROM Features Fast Read Access Time – 150 ns Automatic Page Write Operation – Internal ... 2024-12-09 22:42:04
DS1213C SmartSocket 256k FEATURES • Accepts standard 32K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained ... 2024-12-09 22:42:04
128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks MT48LC8M16A2 – 2 Meg x 16 x 4 banks ... 2024-12-09 22:42:04
CY7C1370D CY7C1372D 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture Features • Pin-compatible and functionally equivalent to ZBT™ • ... 2024-12-09 22:42:04
24AA1025-I/SM 1024K I2C™ CMOS Serial EEPROM complex integrated circuits Features: • Low-Power CMOS Technology: - Read current 450 A, maximum - ... 2024-12-09 22:42:04
512K (64K x 8) OTP CMOS EPROM Features • Fast Read Access Time - 45 ns • Low Power CMOS Operation 100 µA max. Standby 20 mA max. Active at 5 MHz • ... 2024-12-09 22:42:04
DOUBLE DATA RATE (DDR) SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) ... 2024-12-09 22:42:04
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