IXFH160N15T2 Mosfet Power Transistor 160A 150V 880W N Channel TrenchT2

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Shenzhen Retechip Electronics Co., Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:00-86-13922881519

Contact Person:
Mr.Allen Wang View Contact Details

Brand Name	IXYS
Model Number	IXFH160N15T2
Place of Origin	Original Factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, MoneyGram, PayPay
Supply Ability	9000pcs Per Month
Delivery Time	1-2work days
Packaging Details	450Pcs
Type	MOSFET
Description	MOSFET Trench T2 HiperFET Power MOSFET
Shipping by	DHL\UPS\Fedex
Lead time	2-3Working days
Power - Max	880W
Rise Time	15 ns

Detailed Product Description

Mosfet Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2

Description

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can

then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because

the conversion from AC to DC power is being done in the charging station, these units can provide

higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations.

Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system,

and user safety are critical.

Features

• International Standard Package

• High Current Handling Capability

• Fast Intrinsic Diode z Dynamaic dv/dt Rated

•z Avalanche Rated z Low RDS(on)

Applications

• DC-DC Converters

• Battery Chargers

• Switch-Mode and Resonant-Mode Power Supplies

• DC Choppers z AC Motor Drives

• Uninterruptible Power Supplies

• High Speed Power Switching Applications

Product Attribute	Attribute Value

Manufacturer:	IXYS
Product Category:	MOSFET
Technology:	Si
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	160 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	253 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	880 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	26 ns
Forward Transconductance - Min:	80 S

Shipping	Delivery period	For in-stock parts, orders are estimated to ship out in 3 days. Once shipped, estimated delivery time depends on the below carriers you chose: DHL Express, 3-7 business days. DHL eCommerce,12-22 business days. FedEx International Priority, 3-7 business days EMS, 10-15 business days. Registered Air Mail, 15-30 business days.
	Shipping rates	After confirming the order, we will evaluate the shipping cost based on the weight of the goods
	Shipping option	We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
	Shipping tracking	We will notify you by email with tracking number once order is shipped.
Returning warranty	Returning	Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
Returning warranty	Warranty	All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
Ordering	Payment	T/T,PayPal, Credit Card includes Visa, Master, American Express.

Product Tags: IXFH160N15T2 Mosfet Power Transistor Mosfet Power Transistor 160A n channel mosfet transistor 150V

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