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...Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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...Power Electronics TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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... 1.1 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 25 V FET Feature - Power Dissipation (Max)
2024-12-09 22:29:06
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... 2.4 nC @ 10 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 58 pF @ 25 V FET Feature - Power Dissipation (Max)
2024-12-09 22:29:06
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... V • On-Resistance Rds(on): 0.14 Ohm • Input Capacitance (Ciss) @ Vds: 236 pF @ 10V • Operating Temperature: -55°C ~ 175°C • Power Dissipation: 4...
2024-12-09 22:29:06
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...Power Electronics Product Description: The NTMFS4C028NT1G is a power MOSFET transistor that is designed for use in power electronics and converters...
2024-12-09 22:29:06
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... Current: 110A • Drain-Source On-State Resistance: 0.033 Ohms • Maximum Operating Temperature: +175 °C • Mounting Type: Through Hole • Transistor ...
2024-12-09 22:28:51
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SQ2309ES-T1_GE3 Product Listing: Product Features: • Planar double-diffused MOSFET (PDMOSFET) • Low on-resistance • Low input capacitance • Fast ...
2024-12-09 22:29:06
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Product Listing: FDD390N15A MOSFET Power Electronics Features: • N-Channel • Logic Level Gate Drive • 175°C Operating Temperature • 175A @ 25°C ...
2024-12-09 22:29:06
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...Power Isolator IC High Speed Opto Coupler With Reliable Performance Number of Channels 1 Voltage - Isolation 5000Vrms Current Transfer Ratio (Min) ...
2024-12-09 22:30:30
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