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rf power transistors high power
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...High Performance Power Electronics Solution for Maximum Efficiency Description: The IRFR4620TRLPBF is a N-Channel MOSFET transistor with a rated ...
2024-12-09 22:28:51
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...Power Electronics Features: • N-Channel, Enhancement Mode • Low On-Resistance • High-Speed Switching • Low Gate Charge • Low Input and Output ...
2024-12-09 22:29:06
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... speed • High current handling capability • High temperature operation • RoHS compliant Specifications: • Drain Source Voltage: 800V • Gate ...
2024-12-09 22:29:06
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...-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 0.22A Rds On - Drain-Source Resistance: 0.06 Ohm Power Dissipation: 8W Vgs - Gate...
2024-12-09 22:28:51
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... MOSFET High Performance Power Electronics for Maximum Efficiency Specifications: - VDSS: 100V - ID: 40A - RDS(on): 0.0065Ω - Package: TO-247 - ...
2024-12-09 22:28:51
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IRFS7734TRLPBF High-Performance MOSFET Power Electronics for Enhanced Efficiency and Reliability IRFS7734TRLPBF MOSFET Transistor Product Description: ...
2024-12-09 22:28:51
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...Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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...Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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...Power Electronics TO-236-3 Package N-Channel Enhancement Mode Field Effect Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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... 1.1 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 25 V FET Feature - Power Dissipation (Max)
2024-12-09 22:29:06
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