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rf power transistors high power
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... of 0.6 ohms, it is an ideal choice for high-current switching applications. It also features a low input capacitance that allows for fast ...
2024-12-09 22:29:06
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...Transistor Features: - 30V Drain-Source Breakdown Voltage (VDSS) - 150mA Continuous Drain Current (ID) at 25°C - 8.8A Drain-Source On-State ...
2024-12-09 22:29:06
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Product Listing Product Name: IRF5210PBF N-Channel MOSFET Features: • N-Channel MOSFET • Low Input Capacitance • Low Gate Charge • Fast Switching ...
2024-12-09 22:28:51
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Product Listing: FQB34P10TM MOSFET Power Electronics Features: • N-Channel • 100V/34A • Low On-Resistance RDS(on) • Fast Switching • Avalanche Rated • ...
2024-12-09 22:29:06
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NTMFS6H801NT1G MOSFET Power Electronics Product Description: NTMFS6H801NT1G is a MOSFET power electronics device manufactured by ON Semiconductor. It ...
2024-12-09 22:29:06
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...Power MOSFET Product Type: Power MOSFET Package Style: TO-220AB Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55V Id - ...
2024-12-09 22:28:51
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Product Listing: NVF3055L108T1G MOSFET Power Electronics Product Type: MOSFET Power Electronics Configuration: N-Channel MOSFET Maximum Drain Source ...
2024-12-09 22:29:06
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...-Source Voltage (Vgs): 20V • Drain-Source On-State Resistance (Rds): 0.068 ohm • Operating Temperature: -55C to +150C • Transistor Polarity: N...
2024-12-09 22:29:06
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Product Listing: Product Name: IRL7833PBF Description: N-Channel MOSFET Parameters: -VDSS: 30V -RDS(on): 0.025ohm -Id: 40A -Package: PowerFLAT 5x6 ...
2024-12-09 22:28:51
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Product Listing: IRF3205PBF N-Channel MOSFET Product Features: • Maximum Drain Source Voltage (Vdss): 55V • Maximum Gate Source Voltage (Vgs): 20V • ...
2024-12-09 22:28:51
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