China Semiconductor IC Chip manufacturer
Shenzhen Sai Collie Technology Co., Ltd.
Shenzhen Sai Collie Technology Co., Ltd.
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NVF3055L108T1G Mosfet Transistor High Performance Low Power Consumption

NVF3055L108T1G Mosfet Transistor High Performance Low Power Consumption

Brand Name onsemi
Model Number NVF3055L108T1G
Place of Origin Multi-origin
Minimum Order Quantity 1
Price Negotiable
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 999999
Delivery Time 1-7days
Packaging Details Standard
Product Type MOSFET Power Electronics
Manufacturer onsemi
Manufacturer Product Number NVF3055L108T1G
Description MOSFET N-CH 60V 3A SOT223
Manufacturer Standard Lead Time 1-7days
Detailed Description N-Channel 60 V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)
Detailed Product Description

Product Listing:

 

NVF3055L108T1G MOSFET Power Electronics

Product Type: MOSFET Power Electronics

Configuration: N-Channel MOSFET

Maximum Drain Source Voltage (Vdss): 30V

Maximum Gate Source Voltage (Vgs): ±20 V

Maximum Drain Current (Id): 108 A

Rds On (Max) @ Id, Vgs: 0.0055 Ohm @ 108 A, 10 V

Package/Case: TO-220

Operating Temperature: -55°C to 175°C

Power Dissipation: 415 W

Mounting Type: Through Hole

Manufacturer: ON Semiconductor

Manufacturer Part Number: NVF3055L108T1G

 

 

Product Status
Active
FET Type
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
120mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Supplier Device Package
SOT-223 (TO-261)
Package / Case
Base Product Number

 

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