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power applications igbt power module
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... Compliant Product Specifications: • VDS (V): 100V • ID (A): 13A • RDS(on) (mΩ): 4.8mΩ • VGS (V): -20V • Qg (Max) (nC): 27nC • Power Dissipation (W...
2024-12-09 22:29:06
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...Power Electronics This International Rectifier IPD053N06NATMA1 is a N-channel Power MOSFET with a maximum drain source voltage of 30 V and a drain ...
2024-12-09 22:29:06
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...°C to 175°C • Lead-free RoHS compliant • Halogen-free • Fast switching and robust performance • Suitable for high frequency switching applications ...
2024-12-09 22:29:06
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...Power MOSFET Features: • 8.0A, 40V RDS(ON) • Low gate charge • Low Crss • Temperature Compensated Current Limit • Fast Switching • Improved ...
2024-12-09 22:29:06
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FDP032N08 - N-Channel Power MOSFET Product Description: The FDP032N08 is an N-channel power MOSFET designed for use in switching and linear applicatio...
2024-12-09 22:29:06
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...Power Electronics Features: • Low On-Resistance • Low Input Capacitance • Single Pulse Avalanche Energy Rated • 100% UIS Tested • Ease of ...
2024-12-09 22:29:06
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...-source on-resistance of 0.024Ω and a maximum drain current of 41A. It is also capable of sustaining a maximum avalanche energy of 37mJ. This ...
2024-12-09 22:29:06
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... of the programmable system-on-chip (PSoC 4) architecture. It is an ultra-low-power programmable ARM Cortex-M0-based microcontroller. The IC is ...
2024-12-09 22:29:18
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.... It is optimized for low-power applications and provides a wide range of features including: - 16-bit MSP430 CPU with up to 25 MIPS of performance ...
2024-12-09 22:29:41
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...RISC-based MCU with a wide range of features and peripherals. It is designed for low-power applications, with advanced power management and low...
2024-12-09 22:29:41
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