FDP032N08 Mosfet Tube High Power Switching And Drive Solutions

FDP032N08 - N-Channel Power MOSFET

Product Description:

The FDP032N08 is an N-channel power MOSFET designed for use in switching and linear applications. This device is designed to minimize the on-state resistance while providing superior switching performance and excellent avalanche energy and dV/dt capabilities.

Features:

• Low on-state resistance
• Fast switching
• Low gate charge
• High avalanche energy
• 260°C operating junction temperature
• Low input capacitance
• RoHS Compliant

Specifications:

• Drain-source voltage (VDS): 30 V
• Drain-source breakdown voltage (BVDSS): 32 V
• Gate-source voltage (VGS): ±20V
• Gate Threshold Voltage (VGS(th)): 2V
• Continuous Drain Current (ID): 8A
• Power Dissipation (PD): 15W
• Operating Temperature Range: -55°C to +150°C
• Channel Mode: Enhancement
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak

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