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power applications igbt power module
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..., making it ideal for use in power supplies and other electronic devices. Low RDS(on): With a low on-resistance (RDS(on)) of just 10mOhms, this ...
2024-12-09 22:28:51
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...power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain-source voltage of 400V. 3. It is a surface...
2024-12-09 22:28:51
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... Low On Resistance MOSFET Power Electronics for High Efficiency Applications Parameters: - Operating Voltage: -20V to -60V - Drain Current: -3A - ...
2024-12-09 22:28:51
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IRFD120PBF High-Performance N Channel MOSFET for Power Electronics Applications Parameters: - Drain-Source Voltage (VDS): 100V - Drain Current (ID): ...
2024-12-09 22:28:51
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Product Description: 1. IRF7726TRPBF is a N-Channel MOSFET which is ideal for use as a power switching device. 2. It features a high-side blocking ...
2024-12-09 22:28:51
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... - Pulsed Drain Current (Idm): 60A - Rds(on): 0.019Ω - Input Capacitance (Ciss): 4200pF - Power Dissipation (Pd): 7.2W - Operating and Storage ...
2024-12-09 22:28:51
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... designed for high-density applications. This device offers low on-state resistance, fast switching speed, and improved maximum ratings. It is ...
2024-12-09 22:28:51
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... of applications. It has a low gate charge and low gate-to-drain capacitance and is suitable for high-frequency switching applications. It features ...
2024-12-09 22:28:51
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...resistance and low gate charge, making it suitable for a wide range of applications. Parameters: • Drain-Source Voltage: 100V • Continuous Drain ...
2024-12-09 22:28:51
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Product Listing: IRFH5304TRPBF MOSFET Features: • N-Channel Enhancement Mode • 100V Drain-Source Voltage • 4.2A Continuous Drain Current • Low RDS(on) ...
2024-12-09 22:28:51
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