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p channel mosfet power electronics
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... Voltage: 30V • Drain Current: 0.5A (Continuous) • Gate-Source Voltage: -2V to +12V • Power Dissipation: 0.6W • Operating Temperature Range: -55°C ...
2024-12-09 22:29:06
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Description: This BSC035N10NS5ATMA1 MOSFET is an N-Channel enhancement mode field-effect transistor with low on-resistance and low gate charge. It is ...
2024-12-09 22:28:51
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Product Listing: IRF2907ZPBF MOSFET Product Features: • N-Channel Enhancement Mode • 100V • 20A, 0.08 Ohm • Standard Package: TO-220AB • Lead Free ...
2024-12-09 22:29:06
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Product Listing: AO3416 - N-Channel Enhancement Mode MOSFET Features: -High density cell design for extremely low RDS(on) -High speed switching -Low ...
2024-12-09 22:29:06
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AO3413 N-Channel Enhancement Mode MOSFET Main Features: • VDS (V) = -60V • ID (A) = -9.3A • RDS(on) (Ω) = 0.082Ω @ VGS=-10V • Low Gate Charge • Low ...
2024-12-09 22:29:06
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AO4616 N-Channel Enhancement Mode MOSFET Product Features: - Low On-Resistance - Low Gate Threshold Voltage - Low Input Capacitance - Low Output ...
2024-12-09 22:29:06
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AO3420, N-Channel Enhancement Mode Field Effect Transistor Features: - 30V Drain-Source Breakdown Voltage (VDSS) - 150mA Continuous Drain Current (ID) ...
2024-12-09 22:29:06
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Product Description: 1. High speed switching 2. Low gate charge 3. Low on-state resistance 4. 100% avalanche tested 5. 175°C operating temperature 6. ...
2024-12-09 22:28:51
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Features: - N-Channel Enhancement Mode - Low On-Resistance: 4.7 mΩ (max) @ VGS = 10 V - Low Gate Charge: 17 nC (max) - Low Input/Output Capacitance: 5 ...
2024-12-09 22:28:51
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Product descripition: 1. IRFR2407TRPBF is a MOSFET power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain...
2024-12-09 22:28:51
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