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p channel mosfet power electronics
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...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) ...
2024-12-09 22:28:51
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...Channel MOSFET Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain ...
2024-12-09 22:29:06
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... nC @ 20 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3790 pF @ 25 V FET Feature - Power Dissipation (Max) 310W (Tc)
2024-12-09 22:29:06
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... Name: IRFP264PBF Power MOSFET Product Description: The IRFP264PBF Power MOSFET is a high performance, high voltage N-Channel MOSFET with a maximum ...
2024-12-09 22:28:51
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Product Listing: Product Name: IRF7328TRPBF MOSFET Description: This is a N-Channel MOSFET with an integrated protection diode, low on-resistance, low ...
2024-12-09 22:29:06
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...MOSFET Parameters: • Drain-Source Voltage: 650V • Gate-Source Voltage: ±20V • Continuous Drain Current: 9A • Power Dissipation: 36W • RDS(on): 0...
2024-12-09 22:29:06
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Product Listing: Product Name: SPA11N80C3 MOSFET Parameters: • Drain-Source Voltage: 800V • Continuous Drain Current: 11A • RDS(on): 0.0085 Ohm • Gate...
2024-12-09 22:28:51
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Product Listing: Product: IRF4104PBF Power MOSFET Package: TO-220AB VDS (Vdss): 100V VGS (Vgss): 20V RDS(on) (Idss): 3.5 Ohm ID (Continuous Drain ...
2024-12-09 22:28:51
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...Power MOSFET Product Type: MOSFET Package Type: TO-220 Vds - Drain-Source Breakdown Voltage: 55V Rds On - Drain-Source Resistance: 4.7 Ohms Id - ...
2024-12-09 22:28:51
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Product Listing: SQ2309ES-T1_BE3 MOSFET Features: • Low on-resistance • High power dissipation • Low gate charge • Fast switching speed • Avalanche ...
2024-12-09 22:28:51
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