IRFB9N65APBF - 55V N-Channel MOSFET Power Electronics for High-Performance Applications
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Product Name: IRFB9N65APBF MOSFET Parameters: • Drain-Source Voltage: 650V • Gate-Source Voltage: ±20V • Continuous Drain Current: 9A • Power Dissipation: 36W • RDS(on): 0.160ohm • Operating and Storage Temperature: -55°C to 150°C • Mounting Style: Through Hole • Package/Case: TO-220-3 • Technology: MOSFET • Configuration: Single • Polarization: N-Channel • Maximum Operating Temperature: +150°C • Minimum Operating Temperature: -55°C • Channel Mode: Enhancement
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