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low gate charge mosfet power electronics
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...MOSFET Power Electronics The AOI4126 is a MOSFET power electronics device, designed to provide high efficiency, low power dissipation, robust ...
2024-12-09 22:29:06
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...: N-Channel • Power Dissipation (Max): 16.5 W • Transistor Case Style: TO-220AB • Continuous Drain Current (Id): 11 A • No. of Pins: 3 • Operating ...
2024-12-09 22:28:51
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...MOSFET Power Electronics High Performance and Reliable Solutions Product Name: BSC054N04NSG N-Channel MOSFET Function: This N-Channel MOSFET is a ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Transistor for High-Frequency Switching Applications Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ ...
2024-12-09 22:29:06
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..., 4.5V Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V Vgs (Max) ±8V Input ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Single N-Channel Logic Level SO-8FL 30 V 1.7 m 159 A Package 5-DFN Drain to Source Voltage (Vdss) 30 V Current - ...
2024-12-09 22:29:06
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...MOSFET Power Electronics N-Channel UniFETTM 250 V 6.2 A 550 mΩ reduce on-state resistance Drain to Source Voltage (Vdss) 250 V Current - Continuous ...
2024-12-09 22:29:06
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... On (Max) @ Id, Vgs 4.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2 nC @ 10 V Vgs (Max) ±20V Input Capacitance ...
2024-12-09 22:29:06
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...h excellent switching characteristics. It is ideal for power management and switching applications. Parameters: - Operating Voltage: 20V - Drain...
2024-12-09 22:28:51
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Product Listing: IPD60R1K4C6 N-Channel Enhanced MOSFET Specifications: •Voltage: 60V •Resistance: 1KΩ •Capacitance: 4C6 •Current: 5A •Package: TO-252 ...
2024-12-09 22:28:51
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