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low gate charge mosfet power electronics
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... On) 6V, 10V Rds On (Max) @ Id, Vgs 1.05Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V Vgs (Max) ±20V Input ...
2024-12-09 22:29:06
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... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V Vgs (Max) ±20V ...
2024-12-09 22:29:06
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... On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 12A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V Vgs (Max) ±20V ...
2024-12-09 22:29:06
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AON7528, P-Channel Enhancement Mode MOSFET Product Overview: The AON7528 is a P-Channel enhancement mode MOSFET designed to provide high performance ...
2024-12-09 22:29:06
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... drain-source voltage and +/-20V gate-source voltage. It has an on-resistance of 0.14 Ohms and is ideal for applications such as motor control, ...
2024-12-09 22:28:51
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...Ω • Gate-Source Voltage: ±20V • Continuous Drain Current: 11A • Pulsed Drain Current: 22A • Power Dissipation: 17.3W • Operating Temperature Range: ...
2024-12-09 22:29:06
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IRLML6302TRPBF MOSFET Power Electronics Fast Switching with Low On-Resistance for Maximum Efficiency
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...MOSFET Power Electronics Fast Switching with Low On-Resistance for Maximum Efficiency Product Features: • Low On-Resistance: 2.6mΩ (VGS = 10 V) • ...
2024-12-09 22:28:51
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...MOSFET Parameters: • Vds (max): 55V • Rds (on): 0.0075Ω • Ids (max): 110A • Package: TO-220AB • Gate charge (typical): 55nC • Power dissipation ...
2024-12-09 22:28:51
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...MOSFET Power Electronics Package for High Power Applications N-Channel 30 V 3.5A (Ta) 500mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - ...
2024-12-09 22:29:06
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..., Vgs 120mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ ...
2024-12-09 22:29:06
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